View HMC396_764867.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

v00.1002
MICROWAVE CORPORATION
HMC396
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8.0 GHz
Features
Gain: 12 dB P1dB Output Power: +14 dBm Stable Gain Over Temperature 50 Ohm I/O's Small Size: 0.38 mm x 0.58 mm x 0.1 mm
1
AMPLIFIERS - CHIP
Typical Applications
An excellent cascadable 50 Ohm Gain Block or LO Driver for: * Microwave & VSAT Radios * Test Equipment * Military EW, ECM, C3I * Space Telecom
Functional Diagram
General Description
The HMC396 die is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC DC to 8 GHz amplifier. This amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +16 dBm output power. The HMC396 offers 12 dB of gain and an output IP3 of +30 dBm while requiring only 56 mA from a +5V supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. The HMC396 can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (0.22mm2) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.5mm (20 mils).
Electrical Specifications, Vs= +5.0V, Rbias= 22 Ohm, TA = +25 C
Parameter Gain DC - 4.0 GHz 4.0 - 8.0 GHz DC - 4.0 GHz 4.0 - 8.0 GHz DC - 4.0 GHz 4.0 - 8.0 GHz DC - 4.0 GHz 4.0 - 8.0 GHz DC - 8.0 GHz DC - 4.0 GHz 4.0 - 8.0 GHz DC - 4.0 GHz 4.0 - 8.0 GHz DC - 8.0 GHz Min. Typ. 12 11 0.004 0.015 15 12 19 17 16 14 13 30 24 6 56 Max. Units dB dB dB/ C dB/ C dB dB dB dB dB dBm dBm dBm dBm dB mA
Gain Variation Over Temperature
Input Return Loss
Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
1 - 42
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.1002
MICROWAVE CORPORATION
HMC396
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8.0 GHz
GaAs MMIC PUMPED MIXER Gain & Return LossSUB-HARMONICALLY Gain vs. Temperature
15 10 5
RESPONSE (dB) GAIN (dB)
17 - 25 GHz
0 -5 -10 -15 -20 -25 0 1 2 3
S21 S11 S22
+25C +85C -55C
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
OUTPUT RETURN LOSS (dB)
INPUT RETURN LOSS (dB)
-5
+25C +85C -55C
-5
+25C +85C -55C
-10
-10
-15
-15
-20
-20
-25 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz)
-25 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
+25C +85C -55C
Noise Figure vs. Temperature
10 9
REVERSE ISOLATION (dB)
-5
8
NOISE FIGURE (dB)
7 6 5 4 3 2 1
+25C +85C -55C
-10
-15
-20
-25 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz)
0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
1 - 43
AMPLIFIERS - CHIP
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
1
v00.1002
MICROWAVE CORPORATION
HMC396
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8.0 GHz
1
AMPLIFIERS - CHIP
GaAs MMIC SUB-HARMONICALLY Psat vs. Temperature PUMPED MIXER P1dB vs. Temperature
20 18 16 14
P1dB (dBm) Psat (dBm)
17 - 25 GHz
20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) FREQUENCY (GHz)
+25C +85C -55C
12 10 8 6 4 2 0
+25C +85C -55C
Power Compression @ 1 GHz
20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2
Pout (dBm), GAIN (dB), PAE (%)
Power Compression @ 8 GHz
20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8
Pout (dBm), GAIN (dB), PAE (%)
Pout Gain PAE
Pout Gain PAE (%)
0
2
4
6
8 10
-6
-4
-2
0
2
4
6
8
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs. Temperature
34 32 30 28 26
IP3 (dBm)
Gain, Power, OIP3 & Supply Current vs. Supply Voltage @ 1 GHz
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
40 35 30 25
80
60
24 22 20 18 16 14 12 10 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz)
+25C +85C -55C
Icq (mA)
20 15 10 5 0 4.5 4.75 5 Vs(Vdc) 5.25
Icq Gain P1dB Psat OIP3
40
20
0 5.5
1 - 44
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.1002
MICROWAVE CORPORATION
HMC396
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8.0 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) RF Input Power (RFin)(Vcc = +5.0 Vdc) Junction Temperature Continuous Pdiss (T= 85 C) (derate 5.21 mW/C above 85 C) Thermal Resistance (junction to die bottom) Storage Temperature Operating Temperature +7.0 Vdc +10 dBm 150 C 0.339 W
1
AMPLIFIERS - CHIP
NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. ALL TOLERANCES ARE 0.001 (0.025) 3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND 4. BOND PADS ARE 0.004 (0.100) SQUARE 5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150) 6. BACKSIDE METALLIZATION: GOLD 7. BOND PAD METALLIZATION: GOLD
192 C/W -65 to +150 C -55 to +85 C
Outline Drawing
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
1 - 45
v00.1002
MICROWAVE CORPORATION
HMC396
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8.0 GHz
1
AMPLIFIERS - CHIP
Pad Descriptions
Pin Number Function Description Interface Schematic
1
RFIN
This pin is DC coupled. An off chip DC blocking capacitor is required.
2
RFOUT
RF output and DC Bias for the output stage.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Application Circuit
Note: 1. Select Rbias to achieve Icq using equation below, Rbias > 22 Ohm. 2. External blocking capacitors are required on RFIN and RFOUT. Icq = Vs - 3.9 Rbias
Recommended Component Values
Frequency (MHz) Component 50 L1 C1, C2 270 nH 0.01 F 1000 56 nH 100 pF 4000 8.2 nH 100 pF 8000 2.2 nH 100 pF
1 - 46
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.1002
MICROWAVE CORPORATION
HMC396
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8.0 GHz
Assembly Diagram
1
AMPLIFIERS - CHIP
Handling Precautions
Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
1 - 47

▲Up To Search▲

Price & Availability of HMC396

	To Download HMC396 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .